MOSFETs

G4PF50WD IGBT MOSFET

(0 Reviews)
$3.86 $3.088

G4PF50WD is an IGBT Ultrafast recovery diode mainly used in fast switching Applications, and It's an electronic switch where we do not need manual movement for switching. Its recovery time is too fast this features make it used as a...

  • SKU : GM8904753696
  • Categories : MOSFETs

G4PF50WD is an IGBT Ultrafast recovery diode mainly used in fast switching Applications, and It’s an electronic switch where we do not need manual movement for switching. Its recovery time is too fast this features make it used as a switching element. its operating voltage is 2.25V. And a collector current is 28A.

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Features

  • Low Power Loss
  • High-Efficiency
  • High Current Capability
  • Low Forward Voltage Drop
  • Avalanche Rugged Technology
  • GBT co-packaged with HEXFRED TM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations
  • High Surge Capability
  • Low IGBT conduction loss
  • Guarding for Overvoltage Protection
Specification
Model G4PF50WD
Package TO-247AC
Type IGBT MOSFET
Collector Current 28A
Max Lead Temperature 300 Degree Centigrade
Max Power Dissipation 200W
Gate to emitter voltage 20V
Operating Temperature 55 to 150 C

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