TOSHIBA 2SC5570 is a Bipolar Transistor(BJT)- High Voltage NPN Transistor. It is a silicon NPN Triple Diffused Mesa Type Transistor. It is a Through-hole active component that consists of three terminals Base, Collector, and Emitter.DatasheetApplicationsHorizontal Defection Output for High-Resolution Display,...
TOSHIBA 2SC5570 is a Bipolar Transistor(BJT)- High Voltage NPN Transistor. It is a silicon NPN Triple Diffused Mesa Type Transistor. It is a Through-hole active component that consists of three terminals Base, Collector, and Emitter.
Datasheet
| Model | 2SC5570 |
| Brand | TOSHIBA |
| Type | BJT-Bipolar Transistor |
| Collector-Base Voltage (VCBO) | 1700V |
| Collector-Emitter Voltage (VCEO) | 800V |
| Collector Current DC (Ic) | 28A |
| Collector-Current Pulse (Icp) | 56A |
| Base Current (IB) | 14A |
| Collector Power Dissipation (Pc) | 220W |
| Junction Temperature | 150 (Degree C) |
| Storage Temperature Range | -55~150(Degree C) |
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